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Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf(1−x)Zr(x)O(2)
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf(1−x)Zr(x)O(2) (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced...
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| Publicado en: | Nanoscale Res Lett |
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| Autores principales: | , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6449413/ https://ncbi.nlm.nih.gov/pubmed/30949867 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2927-9 |
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