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Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI laye...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6443763/ https://ncbi.nlm.nih.gov/pubmed/30937641 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2943-9 |
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