Peng, Y., Han, G., Xiao, W., Wu, J., Liu, Y., Zhang, J., & Hao, Y. (2019). Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications. Nanoscale Res Lett.
Style de citation ChicagoPeng, Yue, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, et Yue Hao. "Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications." Nanoscale Res Lett 2019.
Style de citation MLAPeng, Yue, et al. "Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications." Nanoscale Res Lett 2019.
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