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Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones
The mechanism of thermal dry etching of cobalt films is discussed for a thermal process utilizing sequential exposures to chlorine gas and a diketone [either 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hexafluoroacetylacetone, hfacH) or 2,4-pentanedione (acetylacetone, acacH)]. The process can be optim...
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| Publicado no: | J Vac Sci Technol A |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Vacuum Society
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6396405/ https://ncbi.nlm.nih.gov/pubmed/30940989 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1116/1.5082187 |
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