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Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study
[Image: see text] Thermal atomic layer etch (ALE) of W metal can be achieved by sequential self-limiting oxidation and chlorination reactions at elevated temperatures. In this paper, we analyze the reaction mechanisms of W ALE using the first-principles simulation. We show that oxidizing agents such...
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| Publicado no: | ACS Appl Mater Interfaces |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American
Chemical Society
2020
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7735657/ https://ncbi.nlm.nih.gov/pubmed/32666796 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c06628 |
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