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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF...
Gardado en:
| Publicado en: | Micromachines (Basel) |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2019
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6356684/ https://ncbi.nlm.nih.gov/pubmed/30621021 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10010030 |
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