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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly...

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Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Seunghyun Yun, Jeongmin Oh, Seokjung Kang, Yoon Kim, Jang Hyun Kim, Garam Kim, Sangwan Kim
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: MDPI AG 2019-11-01
Saila:Micromachines
Gaiak:
Sarrera elektronikoa:https://www.mdpi.com/2072-666X/10/11/760
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