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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a...
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| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6915369/ https://ncbi.nlm.nih.gov/pubmed/31717540 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10110760 |
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