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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a...
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| Gepubliceerd in: | Micromachines (Basel) |
|---|---|
| Hoofdauteurs: | , , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2019
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6915369/ https://ncbi.nlm.nih.gov/pubmed/31717540 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10110760 |
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