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High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (<i>I</i><span style="font-variant: small-caps;">on</span>) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, G...
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| Prif Awduron: | , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI AG
2019-01-01
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| Cyfres: | Micromachines |
| Pynciau: | |
| Mynediad Ar-lein: | https://www.mdpi.com/2072-666X/10/2/77 |
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