Laddar...
Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and to suppress a leakage current from ambipolar cu...
Sparad:
| I publikationen: | Micromachines (Basel) |
|---|---|
| Huvudupphovsmän: | , |
| Materialtyp: | Artigo |
| Språk: | Inglês |
| Publicerad: |
MDPI
2019
|
| Ämnen: | |
| Länkar: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6523832/ https://ncbi.nlm.nih.gov/pubmed/30935007 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10040229 |
| Taggar: |
Lägg till en tagg
Inga taggar, Lägg till första taggen!
|