Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be introduced b...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Nanoscale Res Lett
Prif Awduron: Zhang, Maolin, Guo, Yufeng, Zhang, Jun, Yao, Jiafei, Chen, Jing
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Springer US 2020
Pynciau:
Nano Express
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC7295927/
https://ncbi.nlm.nih.gov/pubmed/32542513
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03360-7
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

Eitemau Tebyg