Wird geladen...
Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be introduced b...
Gespeichert in:
| Veröffentlicht in: | Nanoscale Res Lett |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2020
|
| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7295927/ https://ncbi.nlm.nih.gov/pubmed/32542513 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03360-7 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|