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Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8225217/ https://ncbi.nlm.nih.gov/pubmed/34074056 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12060609 |
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