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Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by...
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| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2018
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6185875/ https://ncbi.nlm.nih.gov/pubmed/30315380 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2723-y |
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