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Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture
A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5970141/ https://ncbi.nlm.nih.gov/pubmed/29802363 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-26580-5 |
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