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Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He be...

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Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., Nastasi, Michael
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group UK 2018
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5864747/
https://ncbi.nlm.nih.gov/pubmed/29568069
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-23426-y
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