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Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He be...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5864747/ https://ncbi.nlm.nih.gov/pubmed/29568069 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-23426-y |
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