Effect of Nitrogen Doping on the Photoluminescence of Amorphous Silicon Oxycarbide Films

The effect of nitrogen doping on the photoluminescence (PL) of amorphous SiC<sub>x</sub>O<sub>y</sub> films was investigated. An increase in the content of nitrogen in the films from 1.07% to 25.6% resulted in red, orange-yellow, white, and blue switching PL. Luminescence dec...

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Detalhes bibliográficos
Main Authors: Jie Song, Rui Huang, Yi Zhang, Zewen Lin, Wenxing Zhang, Hongliang Li, Chao Song, Yanqing Guo, Zhenxu Lin
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2019-09-01
Colecção:Micromachines
Assuntos:
photoluminescence
amorphous silicon oxycarbide
nitrogen doping
defect
plasma enhanced chemical vapor deposition
Acesso em linha:https://www.mdpi.com/2072-666X/10/10/649
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