Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

[Image: see text] Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on no...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Chem Mater
Hlavní autoři: Singh, Joseph A., Thissen, Nick F. W., Kim, Woo-Hee, Johnson, Hannah, Kessels, Wilhelmus M. M., Bol, Ageeth A., Bent, Stacey F., Mackus, Adriaan J. M.
Médium: Artigo
Jazyk:Inglês
Vydáno: American Chemical Society 2017
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5828705/
https://ncbi.nlm.nih.gov/pubmed/29503508
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.chemmater.7b03818
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky