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Atomic Layer Deposition of Al-Doped MoS(2): Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density
[Image: see text] Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS(2) via plasma-enhanced atomic layer deposition (ALD), resulting...
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| Pubblicato in: | ACS Appl Nano Mater |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
American Chemical
Society
2020
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| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7590523/ https://ncbi.nlm.nih.gov/pubmed/33134882 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsanm.0c02167 |
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