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On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
[Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. In addition, the majorit...
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| Опубликовано в: : | ACS Appl Electron Mater |
|---|---|
| Главные авторы: | , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
American
Chemical Society
2021
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| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8320240/ https://ncbi.nlm.nih.gov/pubmed/34337417 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsaelm.1c00379 |
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