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Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors
Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS(2)/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electr...
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| Publicado en: | Nanomaterials (Basel) |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2017
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5791101/ https://ncbi.nlm.nih.gov/pubmed/29283377 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8010014 |
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