Nazir, G., Khan, M. F., Aftab, S., Afzal, A. M., Dastgeer, G., Rehman, M. A., . . . Eom, J. (2017). Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors. Nanomaterials (Basel).
Citação norma ChicagoNazir, Ghazanfar, Muhammad Farooq Khan, Sikandar Aftab, Amir Muhammad Afzal, Ghulam Dastgeer, Malik Abdul Rehman, Yongho Seo, and Jonghwa Eom. "Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors." Nanomaterials (Basel) 2017.
MLA citiranjeNazir, Ghazanfar, et al. "Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors." Nanomaterials (Basel) 2017.
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