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Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films

Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabr...

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Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Afzal, Amir Muhammad, Khan, Muhammad Farooq, Nazir, Ghazanfar, Dastgeer, Ghulam, Aftab, Sikandar, Akhtar, Imtisal, Seo, Yongho, Eom, Jonghwa
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2018
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5821884/
https://ncbi.nlm.nih.gov/pubmed/29467459
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-21787-y
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