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Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabr...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group UK
2018
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5821884/ https://ncbi.nlm.nih.gov/pubmed/29467459 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-21787-y |
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