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Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films

Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabr...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Afzal, Amir Muhammad, Khan, Muhammad Farooq, Nazir, Ghazanfar, Dastgeer, Ghulam, Aftab, Sikandar, Akhtar, Imtisal, Seo, Yongho, Eom, Jonghwa
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5821884/
https://ncbi.nlm.nih.gov/pubmed/29467459
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-21787-y
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