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Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography
[Image: see text] High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of t...
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| Publicado no: | ACS Nano |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American
Chemical Society
2017
|
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5746844/ https://ncbi.nlm.nih.gov/pubmed/29083870 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.7b06307 |
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