Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography

[Image: see text] High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of t...

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Publicat a:ACS Nano
Autors principals: Ryu Cho, Yu Kyoung, Rawlings, Colin D., Wolf, Heiko, Spieser, Martin, Bisig, Samuel, Reidt, Steffen, Sousa, Marilyne, Khanal, Subarna R., Jacobs, Tevis D. B., Knoll, Armin W.
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2017
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5746844/
https://ncbi.nlm.nih.gov/pubmed/29083870
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.7b06307
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