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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5711846/ https://ncbi.nlm.nih.gov/pubmed/29196749 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-17033-6 |
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