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A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5706180/ https://ncbi.nlm.nih.gov/pubmed/29072611 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10111233 |
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