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Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
A physically intuitive current injection efficiency model for a GaN:Eu quantum well (QW) has been developed to clarify the necessary means to achieve device quantum efficiency higher than the state-of-the-art GaN:Eu system for red light emission. The identification and analysis of limiting factors f...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5677028/ https://ncbi.nlm.nih.gov/pubmed/29116197 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-15302-y |
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