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Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO(2) layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth tec...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5575063/ https://ncbi.nlm.nih.gov/pubmed/28852044 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-10086-7 |
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