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Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering
Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to som...
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| 出版年: | Nanomaterials (Basel) |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5535222/ https://ncbi.nlm.nih.gov/pubmed/28672868 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7070156 |
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