APA Цитирование

Hsu, M., Chang, S., Chang, S., Wu, W., & Li, J. (2017). Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering. Nanomaterials (Basel).

Chicago-стиль цитирования

Hsu, Ming-Hung, Sheng-Po Chang, Shoou-Jinn Chang, Wei-Ting Wu, and Jyun-Yi Li. "Oxygen Partial Pressure Impact On Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated Via RF Sputtering." Nanomaterials (Basel) 2017.

MLA-цитирование

Hsu, Ming-Hung, et al. "Oxygen Partial Pressure Impact On Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated Via RF Sputtering." Nanomaterials (Basel) 2017.

Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.