Hsu, M., Chang, S., Chang, S., Wu, W., & Li, J. (2017). Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering. Nanomaterials (Basel).
Style de citation ChicagoHsu, Ming-Hung, Sheng-Po Chang, Shoou-Jinn Chang, Wei-Ting Wu, et Jyun-Yi Li. "Oxygen Partial Pressure Impact On Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated Via RF Sputtering." Nanomaterials (Basel) 2017.
Style de citation MLAHsu, Ming-Hung, et al. "Oxygen Partial Pressure Impact On Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated Via RF Sputtering." Nanomaterials (Basel) 2017.
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