Загрузка...
Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication
A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2 /Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF exc...
Сохранить в:
| Опубликовано в: : | Journal of Applied Research and Technology |
|---|---|
| Главные авторы: | , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Universidad Nacional Autónoma de México
2015
|
| Предметы: | |
| Online-ссылка: | https://www.redalyc.org/articulo.oa?id=47439895002 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|