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An atomic carbon source for high temperature molecular beam epitaxy of graphene
We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated t...
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| Veröffentlicht in: | Sci Rep |
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| Hauptverfasser: | , , , , , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group UK
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5529545/ https://ncbi.nlm.nih.gov/pubmed/28747805 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-07021-1 |
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