An atomic carbon source for high temperature molecular beam epitaxy of graphene

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated t...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Sci Rep
Autors principals: Albar, J. D., Summerfield, A., Cheng, T. S., Davies, A., Smith, E. F., Khlobystov, A. N., Mellor, C. J., Taniguchi, T., Watanabe, K., Foxon, C. T., Eaves, L., Beton, P. H., Novikov, S. V.
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2017
Matèries:
Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5529545/
https://ncbi.nlm.nih.gov/pubmed/28747805
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-07021-1
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars