Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré pat...

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Bibliografiska uppgifter
I publikationen:Sci Rep
Huvudupphovsmän: Summerfield, Alex, Davies, Andrew, Cheng, Tin S., Korolkov, Vladimir V., Cho, YongJin, Mellor, Christopher J., Foxon, C. Thomas, Khlobystov, Andrei N., Watanabe, Kenji, Taniguchi, Takashi, Eaves, Laurence, Novikov, Sergei V., Beton, Peter H.
Materialtyp: Artigo
Språk:Inglês
Publicerad: Nature Publishing Group 2016
Ämnen:
Article
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC4772548/
https://ncbi.nlm.nih.gov/pubmed/26928710
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22440
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