Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré pat...

Descripción completa

Guardado en:
Detalles Bibliográficos
Publicado en:Sci Rep
Autores principales: Summerfield, Alex, Davies, Andrew, Cheng, Tin S., Korolkov, Vladimir V., Cho, YongJin, Mellor, Christopher J., Foxon, C. Thomas, Khlobystov, Andrei N., Watanabe, Kenji, Taniguchi, Takashi, Eaves, Laurence, Novikov, Sergei V., Beton, Peter H.
Formato: Artigo
Lenguaje:Inglês
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC4772548/
https://ncbi.nlm.nih.gov/pubmed/26928710
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22440
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares