Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Sci Rep
मुख्य लेखकों: Cho, Yong-Jin, Summerfield, Alex, Davies, Andrew, Cheng, Tin S., Smith, Emily F., Mellor, Christopher J., Khlobystov, Andrei N., Foxon, C. Thomas, Eaves, Laurence, Beton, Peter H., Novikov, Sergei V.
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Nature Publishing Group 2016
विषय:
Article
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC5041098/
https://ncbi.nlm.nih.gov/pubmed/27681943
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34474
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