High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of...

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Bibliografiske detaljer
Udgivet i:Materials (Basel)
Main Authors: Cheng, Tin S., Summerfield, Alex, Mellor, Christopher J., Khlobystov, Andrei N., Eaves, Laurence, Foxon, C. Thomas, Beton, Peter H., Novikov, Sergei V.
Format: Artigo
Sprog:Inglês
Udgivet: MDPI 2018
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6073546/
https://ncbi.nlm.nih.gov/pubmed/29966333
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11071119
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