Ab initio calculation of energy levels for phosphorus donors in silicon

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modeling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electro...

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Udgivet i:Sci Rep
Main Authors: Smith, J. S., Budi, A., Per, M. C., Vogt, N., Drumm, D. W., Hollenberg, L. C. L., Cole, J. H., Russo, S. P.
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group UK 2017
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5519722/
https://ncbi.nlm.nih.gov/pubmed/28729674
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06296-8
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