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Ab initio calculation of energy levels for phosphorus donors in silicon
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modeling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electro...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5519722/ https://ncbi.nlm.nih.gov/pubmed/28729674 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06296-8 |
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