Chargement en cours...
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional...
Enregistré dans:
| Auteurs principaux: | , , , , |
|---|---|
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer
2013
|
| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3606473/ https://ncbi.nlm.nih.gov/pubmed/23445785 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-111 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|