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Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3606473/ https://ncbi.nlm.nih.gov/pubmed/23445785 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-111 |
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