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Ab initio electronic properties of dual phosphorus monolayers in silicon
In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, inv...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4158386/ https://ncbi.nlm.nih.gov/pubmed/25246862 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-443 |
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