Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics

A retention behavior model for self-rectifying TaO/HfO(x)- and TaO/AlO(x)-based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because t...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Lin, Yu-De, Chen, Pang-Shiu, Lee, Heng-Yuan, Chen, Yu-Sheng, Rahaman, Sk. Ziaur, Tsai, Kan-Hsueh, Hsu, Chien-Hua, Chen, Wei-Su, Wang, Pei-Hua, King, Ya-Chin, Lin, Chrong Jung
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5469721/
https://ncbi.nlm.nih.gov/pubmed/28618715
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2179-5
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