Citazione APA

Lin, Y., Chen, P., Lee, H., Chen, Y., Rahaman, S. Z., Tsai, K., . . . Lin, C. J. (2017). Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics. Nanoscale Res Lett.

Stile di citazione Chicago

Lin, Yu-De, et al. "Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM With Self-Rectifying Switch Characteristics." Nanoscale Res Lett 2017.

Citazione MLA

Lin, Yu-De, et al. "Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM With Self-Rectifying Switch Characteristics." Nanoscale Res Lett 2017.

Attenzione: Queste citazioni potrebbero non essere precise al 100%.