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Analysis of Leakage Current of HfO(2)/TaO(x)-Based 3-D Vertical Resistive Random Access Memory Array
Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8227016/ https://ncbi.nlm.nih.gov/pubmed/34073505 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12060614 |
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