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Pseudo-Interface Switching of a Two-Terminal TaO(x)/HfO(2) Synaptic Device for Neuromorphic Applications
Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaO(x)/HfO(2)) was fabricated, and its synaptic applications were characterized. Device deposition was c...
שמור ב:
| הוצא לאור ב: | Nanomaterials (Basel) |
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| Main Authors: | , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI
2020
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7466475/ https://ncbi.nlm.nih.gov/pubmed/32784590 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10081550 |
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