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Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO(2)/Al(2)O(3)/HfO(2) Based Memristor on ITO Electrode
Atomic layer deposited (ALD) HfO(2)/Al(2)O(3)/HfO(2) tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7589730/ https://ncbi.nlm.nih.gov/pubmed/33092042 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10102069 |
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