Mahata, C., Kang, M., & Kim, S. (2020). Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO(2)/Al(2)O(3)/HfO(2) Based Memristor on ITO Electrode. Nanomaterials (Basel).
Chicago Style CitationMahata, Chandreswar, Myounggon Kang, i Sungjun Kim. "Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO(2)/Al(2)O(3)/HfO(2) Based Memristor On ITO Electrode." Nanomaterials (Basel) 2020.
Cita MLAMahata, Chandreswar, Myounggon Kang, i Sungjun Kim. "Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO(2)/Al(2)O(3)/HfO(2) Based Memristor On ITO Electrode." Nanomaterials (Basel) 2020.
Atenció: Aquestes cites poden no estar 100% correctes.