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High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
Precession electron diffraction has been used to systematically measure the deformation in Si/SiGe blanket films and patterned finFET test structures grown on silicon-on-insulator type wafers. Deformation maps have been obtained with a spatial resolution of 2.0 nm and a precision of ±0.025%. The mea...
Tallennettuna:
| Julkaisussa: | Appl Phys Lett |
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| Päätekijät: | , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
AIP Publishing LLC
2017
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5453792/ https://ncbi.nlm.nih.gov/pubmed/28652641 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4983124 |
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