High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction

Precession electron diffraction has been used to systematically measure the deformation in Si/SiGe blanket films and patterned finFET test structures grown on silicon-on-insulator type wafers. Deformation maps have been obtained with a spatial resolution of 2.0 nm and a precision of ±0.025%. The mea...

Täydet tiedot

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Bibliografiset tiedot
Julkaisussa:Appl Phys Lett
Päätekijät: Cooper, David, Bernier, Nicolas, Rouvière, Jean-Luc, Wang, Yun-Yu, Weng, Weihao, Madan, Anita, Mochizuki, Shogo, Jagannathan, Hemanth
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: AIP Publishing LLC 2017
Aiheet:
Nanoscale Science and Technology
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5453792/
https://ncbi.nlm.nih.gov/pubmed/28652641
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4983124
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