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Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO(2)/SiON Gate Stack
The channel fluorine implantation (CFI) process was integrated with the Si(3)N(4) contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO(2)/SiON) gate stack. The SiN CESL process clearl...
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| Publicado no: | Materials (Basel) |
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| Autor principal: | |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5453296/ https://ncbi.nlm.nih.gov/pubmed/28788572 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7032370 |
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