Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3–...

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Main Authors: Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou, Jack C. Lee
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2012-03-01
Colecção:Applied Sciences
Assuntos:
InGaAs
HfO2
fluorine plasma treatment
high-k dielectrics
Acesso em linha:http://www.mdpi.com/2076-3417/2/1/233
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